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IXTN22N100L
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
SOT-227B (IXTN) Outline
g fs
V DS = 20V, I D = 0.5 ? I DSS , Note 1
4.5
7.0
9.5
S
C iss
7050
pF
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I DSS
R G = 2 Ω (External)
600
100
36
35
80
50
270
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I DSS
70
110
nC
nC
(M4 screws (4x) supplied)
R thJC
0.18 ° C/W
R thCS
Safe-Operating-Area Specification
0.05
° C/W
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
SOA
V DS = 800V, I D = 0.3A, T C = 90 ° C , tp = 5s
240
W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
Note
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
I F = I S , -di/dt = 100A/ μ s V R = 100V, V GS = 0V
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
1000
22
50
1.5
A
A
V
ns
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2
6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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